Thank you for taking an interest in the military and defense parts, aerospace parts, and other NSN part offerings we offer here on ASAP Rotable Parts. You have reached the request for quote (RFQ) page for Harnischfeger Corp part number 5309-1N, a Microcircuit Set item that is listed alongside the NSN 5962013630915 for an ease of identification. If you would like to receive more information on this part alongside purchasing options, please fill out and submit the form provided on this page at your earliest convenience. When you provide us with details like your target price, expected shipping time frame, and more, we can best formulate and present a quote on part number 5309-1N that caters to you.
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To ensure an ease of part identification and procurement, we list all offerings with as much information as we can. For example, part number 5309-1N is specifically produced under CAGE Code 56010, that of which identifies the specific facility where this traces back to. Additionally, with the first digits of NSN 5962-01-363-0915, one can determine that this item belongs to FSC 5962 Microcircuits Electronic. With such information, you can always rest assured that you are procuring exactly what you require. As such, get started on the quotation process today, and see why so many customers steadily choose us for fulfillment.
| NSN | FSC | NIIN | CLS | Hazmat | DEMIL | Cancelled NSN |
|---|---|---|---|---|---|---|
| 5962-01-363-0915 Item PartTypeName: MICROCIRCUIT SET | 5962 | 013630915 | 0 | N | B | |
| CIIC | HCC | ESD | PMIC | Criticality | ENAC | |
| U | B | A | 0 | |||
| Part Number | ISC | RNVC | RNCC | HCC | MSDS | SADC |
| 5962-8769001RA | 2 | 1 | 5 |
| MRC | Criteria | Characteristic |
|---|---|---|
| AFGA | OPERATING TEMP RANGE | -55.0/100.0 DEG CELSIUS 1ST MEMORY-55.0/125.0 DEG CELSIUS 2ND MEMORY |
| ASDD | COMPONENT FUNCTION RELATIONSHIP | UNMATCHED |
| CTFT | CASE OUTLINE SOURCE AND DESIGNATOR | D-3 MIL-M-38510 1ST MEMORYD-8 MIL-M-38510 2ND MEMORY |
| CXCY | PART NAME ASSIGNED BY CONTROLLING AGENCY | MICROCIRCUIT DEVICES,EPROM/PROM |
| CQWX | OUTPUT LOGIC FORM | METAL OXIDE-SEMICONDUCTOR LOGIC 1ST MEMORYBIPOLAR METAL-OXIDE SEMICONDUCTOR 2ND MEMORY |
| CSSL | DESIGN FUNCTION AND QUANTITY | 2 PROM PROGRAM TABLE |
| TTQY | TERMINAL TYPE AND QUANTITY | 24 CASE 1ST MEMORY20 CASE 2ND MEMORY |
| CQSJ | INCLOSURE MATERIAL | CERAMIC |
| CBBL | FEATURES PROVIDED | PROGRAMMED |
| CQSZ | INCLOSURE CONFIGURATION | DUAL-IN-LINE |
| CWSG | TERMINAL SURFACE TREATMENT | SOLDER |
| CZEM | MICROCIRCUIT DEVICE TYPE AND QUANTITY | 2 MEMORY |
| CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC | -0.3 VOLTS MINIMUM ABSOLUTE INPUT AND 7.0 VOLTS MAXIMUM ABSOLUTE INPUT |
| CZEQ | TIME RATING PER CHACTERISTIC | 450.00 NANOSECONDS NOMINAL ACCESS 1ST MEMORY70.00 NANOSECONDS NOMINAL ACCESS 2ND MEMORY |
| CZER | MEMORY DEVICE TYPE | EEPROM ERR-100 ERR-100ROM ERR-100 ERR-100 |
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